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SCT055TO65G3

型號描述:
N-Channel 650 V 30A (Tc) 234W (Tc) Surface Mount TOLL (HV)
SILICON CARBIDE POWER MOSFET 650
型號:
SCT055TO65G3
品牌:
STMicroelectronics
交期:
5-8工作天
原廠包裝量:
1+NT$293.908
10+NT$200.585
100+NT$157.598
起訂量:1 倍增量:1
價格: NT$293.908 數量:

合計: NT$294

FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
72mOhm @ 15A, 18V
Vgs(th) (Max) @ Id
4.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 18 V
Vgs (Max)
+18V, -5V
Input Capacitance (Ciss) (Max) @ Vds
687 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
234W (Tc)
Operating Temperature
-65°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
TOLL (HV)
Package / Case
8-PowerSFN
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