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SCT4065DEC11

型號描述:
N-Channel 750 V 25A (Tj) 88W Through Hole TO-247N
碳化矽MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 25A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
型號:
SCT4065DEC11
品牌:
ROHM Semiconductor
交期:
5-8工作天
原廠包裝量:
450
1+NT$379.756
10+NT$206.174
100+NT$190.586
450+NT$189.17
起訂量:1 倍增量:1
價格: NT$379.756 數量:

合計: NT$380

FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
750 V
Current - Continuous Drain (Id) @ 25°C
25A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
85mOhm @ 12A, 18V
Vgs(th) (Max) @ Id
4.8V @ 6.15mA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 18 V
Vgs (Max)
+21V, -4V
Input Capacitance (Ciss) (Max) @ Vds
1066 pF @ 500 V
FET Feature
-
Power Dissipation (Max)
88W
Operating Temperature
175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247N
Package / Case
TO-247-3
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