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首頁 > RENESAS代理商 > TP65H050G4YS
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TP65H050G4YS

型號描述:
型號:
TP65H050G4YS
品牌:
RENESAS
交期:
7-12工作天
原廠包裝量:
1
1+NT$553.885
5+NT$512.669
10+NT$471.393
50+NT$430.117
100+NT$385.137
250+NT$344.254
起訂量:1 倍增量:1
價格: NT$553.885 數量:

合計: NT$554

FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
60mOhm @ 22A, 10V
Vgs(th) (Max) @ Id
4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
132W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4
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