HGTG30N60B3D
- 型號描述:
- The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high
- 型號:
- HGTG30N60B3D
- 品牌:
- ON Semiconductor
- 交期:
- 7-12工作天
- 原廠包裝量:
- Series
- -
- Packaging
- Tube
- Part Status
- Not For New Designs
- IGBT Type
- -
- Voltage - Collector Emitter Breakdown (Max)
- 600V
- Current - Collector (Ic) (Max)
- 60A
- Current - Collector Pulsed (Icm)
- 220A
- Vce(on) (Max) @ Vge, Ic
- 1.9V @ 15V, 30A
- Power - Max
- 208W
- Switching Energy
- 550µJ (on), 680µJ (off)
- Input Type
- Standard
- Gate Charge
- 170nC
- Td (on/off) @ 25°C
- 36ns/137ns
- Test Condition
- 480V, 30A, 3Ohm, 15V
- Reverse Recovery Time (trr)
- 55ns
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Supplier Device Package
- TO-247-3
- Base Part Number
- HGTG30N60
- 精選品牌
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