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HGTG20N60B3D
影像僅供參考,以產品規格為準

HGTG20N60B3D

型號描述:
IGBT 600V 40A 165W 通孔式 TO-247-3
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:165W; Collector Emitter Voltage
型號:
HGTG20N60B3D
品牌:
ON Semiconductor
交期:
7-12工作天
原廠包裝量:
1+¥52.832
10+¥35.048
25+¥34.632
50+¥34.528
100+¥34.424
起訂量:1倍增量:1
價格:¥52.832數量:

合計:¥52.83

Series
-
Packaging
Tube
Part Status
Not For New Designs
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
40A
Current - Collector Pulsed (Icm)
160A
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 20A
Power - Max
165W
Switching Energy
475µJ (on), 1.05mJ (off)
Input Type
Standard
Gate Charge
80nC
Td (on/off) @ 25°C
-
Test Condition
-
Reverse Recovery Time (trr)
55ns
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247-3
Base Part Number
HGTG20N60
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