HGTG10N120BND
- 型號描述:
- IGBT,N CH,NPT,1200V,35A,TO-247; Transistor Type:IGBT; DC Collector Current:35A; Collector Emitter Voltage Vces:2.7V; Collector Emitter Voltage V(br)ce
- 型號:
- HGTG10N120BND
- 品牌:
- ON Semiconductor
- 交期:
- 10-18工作天
- 原廠包裝量:
- 幣別 (NTD)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | NT$115.44 |
| 25+ | NT$107.12 |
| 100+ | NT$102.96 |
| 500+ | NT$98.8 |
| 1000+ | NT$93.6 |
起訂量：1倍增量：1
價格:NT$115.44數量:
合計:NT$115
- Series
- -
- Packaging
- Tube
- Part Status
- Not For New Designs
- IGBT Type
- NPT
- Voltage - Collector Emitter Breakdown (Max)
- 1200V
- Current - Collector (Ic) (Max)
- 35A
- Current - Collector Pulsed (Icm)
- 80A
- Vce(on) (Max) @ Vge, Ic
- 2.7V @ 15V, 10A
- Power - Max
- 298W
- Switching Energy
- 850µJ (on), 800µJ (off)
- Input Type
- Standard
- Gate Charge
- 100nC
- Td (on/off) @ 25°C
- 23ns/165ns
- Test Condition
- 960V, 10A, 10Ohm, 15V
- Reverse Recovery Time (trr)
- 70ns
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Supplier Device Package
- TO-247-3
- 精選品牌
- 熱銷產品
- ADL8142ACPZN
- CRCW060368K0FKEA
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