BS170
- 型號描述:
- This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product ha
- 型號:
- BS170
- 品牌:
- ON Semiconductor
- 交期:
- 10-18工作天
- 原廠包裝量:
- 10000
- 幣別 (NTD)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | NT$5.2 |
| 25+ | NT$4.68 |
| 100+ | NT$4.68 |
| 500+ | NT$4.16 |
| 1000+ | NT$4.16 |
起訂量：1倍增量：1
價格:NT$5.2數量:
合計:NT$5
- Breakdown Voltage (Drain to Source)
- 60.0 V
- Breakdown Voltage [Gate to Source]
- -20.0 V to 20.0 V
- Case/Package
- TO-92
- Current Rating
- 500 mA
- Continuous Drain Current (Ids)
- 500 mA
- Input Capacitance
- 60.0 pF
- Lead-Free Status
- Lead Free
- Lifecycle Status
- Obsolete
- Mounting Style
- Through Hole
- Operating Temperature
- -55.0 °C to 150 °C
- Packaging
- Bulk, Box
- Number of Pins
- 3
- Polarity
- N-Channel
- Power Dissipation
- 830 mW
- Drain to Source Resistance (on) (Rds)
- 5.00 Ω
- REACH SVHC Compliance
- No SVHC
- 環保標示
- Compliant
- Drain to Source Voltage (Vds)
- 60.0 V
- Voltage Rating (DC)
- 60.0 V
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