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G3R160MT17D

型號描述:
N-Channel 1700 V 21A (Tc) 175W (Tc) Through Hole TO-247-3
SIC MOSFET N-CH 21A TO247-3
型號:
G3R160MT17D
品牌:
Navitas Semiconductor, Inc.
交期:
5-8工作天
原廠包裝量:
1+NT$608.073
30+NT$375.682
120+NT$324.832
510+NT$304.208
起訂量:1 倍增量:1
價格: NT$608.073 數量:

合計: NT$608

FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
208mOhm @ 12A, 15V
Vgs(th) (Max) @ Id
2.7V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 15 V
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
1272 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
175W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
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