IRFB3206PBF
- 型號描述:
- MOSFET, N, 60V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:60V; On Resistance Rds(on):3mohm;
- 型號:
- IRFB3206PBF
- 品牌:
- Infineon
- 交期:
- 5-8工作天
- 原廠包裝量:
- 1000
- 幣別 (RMB)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | ¥17.052 |
| 10+ | ¥14.448 |
| 50+ | ¥14.448 |
| 100+ | ¥11.592 |
| 1000+ | ¥8.3748 |
| 10000+ | ¥7.5096 |
起訂量：1倍增量：1
價格:¥17.052數量:
合計:¥17.05
- Series
- HEXFET®
- Packaging
- Tube
- Part Status
- Active
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 60V
- Current - Continuous Drain (Id) @ 25°C
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Rds On (Max) @ Id, Vgs
- 3mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs
- 170nC @ 10V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 6540pF @ 50V
- FET Feature
- -
- Power Dissipation (Max)
- 300W (Tc)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-220AB
- Package / Case
- TO-220-3
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