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IRF630NPBFAKMA1

型號描述:
N-Channel 200 V 9.3A (Tc) 82W (Tc) Through Hole TO-220AB
PLANAR 40<-<100V
型號:
IRF630NPBFAKMA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
2000+NT$17.528
起訂量:2000 倍增量:1
價格: NT$17.528 數量:

合計: NT$35056

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
300mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
575 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
82W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
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