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IRF40H210
影像僅供參考,以產品規格為準

IRF40H210

型號描述:
Benefits: Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/d
型號:
IRF40H210
品牌:
Infineon
交期:
10-18工作天
原廠包裝量:
1+NT$56.68
25+NT$52.52
100+NT$50.44
500+NT$48.36
1000+NT$45.76
起訂量:1倍增量:1
價格:NT$56.68數量:

合計:NT$57

Series
HEXFET®, StrongIRFET™
Packaging
Tape & Reel (TR)
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.7V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
152nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5406pF @ 25V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-PQFN (5x6)
Package / Case
8-PowerVDFN
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