IRF1405PBF
- 型號描述:
- Mosfet, Power; N-ch; Vdss 55V; Rds(on) 4.6MILLIOHMS; Id 169A; TO-220AB; Pd 330W; -55DE
- 型號:
- IRF1405PBF
- 品牌:
- Infineon
- 交期:
- 5-8工作天
- 原廠包裝量:
- 幣別 (NTD)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | NT$109.0375 |
| 10+ | NT$98.0623 |
| 100+ | NT$80.3553 |
| 500+ | NT$68.4062 |
| 1000+ | NT$57.6923 |
| 2000+ | NT$54.8076 |
| 5000+ | NT$52.747 |
起訂量：1倍增量：1
價格:NT$109.0375數量:
合計:NT$109
- Series
- HEXFET®
- Packaging
- Tube
- Part Status
- Active
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 55V
- Current - Continuous Drain (Id) @ 25°C
- 169A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Rds On (Max) @ Id, Vgs
- 5.3mOhm @ 101A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 260nC @ 10V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 5480pF @ 25V
- FET Feature
- -
- Power Dissipation (Max)
- 330W (Tc)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-220AB
- Package / Case
- TO-220-3
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