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首頁 > Infineon代理商 > IPT020N10N5ATMA1
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IPT020N10N5ATMA1

型號描述:
型號:
IPT020N10N5ATMA1
品牌:
Infineon
交期:
8-12工作天
原廠包裝量:
2000
2000+NT$140.84
起訂量:2000 倍增量:1
價格: NT$140.84 數量:

合計: NT$281680

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
31A (Ta), 260A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
2mOhm @ 150A, 10V
Vgs(th) (Max) @ Id
3.8V @ 202µA
Gate Charge (Qg) (Max) @ Vgs
152 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
11000 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
273W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
PG-HSOF-8-1
Package / Case
8-PowerSFN
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