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首頁 > Infineon Technologies代理商 > IPP65R041CFD7XKSA1
IPP65R041CFD7XKSA1
影像僅供參考,以產品規格為準

IPP65R041CFD7XKSA1

型號描述:
N-Channel 650 V 50A (Tc) 227W (Tc) Through Hole PG-TO220-3-1
MOSFET HIGH POWER_NEW
型號:
IPP65R041CFD7XKSA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
500
1+NT$410.865
10+NT$371.28
100+NT$307.4663
500+NT$267.8813
起訂量:1倍增量:1
價格:NT$410.865數量:

合計:NT$411

Packaging
Tube
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Rds On (Max) @ Id, Vgs
41mOhm @ 24.8A, 10V
FET Feature
-
Power Dissipation (Max)
227W (Tc)
Vgs(th) (Max) @ Id
4.5V @ 1.24mA
Supplier Device Package
PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
650 V
Gate Charge (Qg) (Max) @ Vgs
102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4975 pF @ 400 V
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