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首頁 > Infineon Technologies代理商 > IPP180N10N3GXKSA1
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IPP180N10N3GXKSA1

型號描述:
N-Channel 100 V 43A (Tc) 71W (Tc) Through Hole PG-TO220-3
MOSFET N-Ch 100V 43A TO220-3 OptiMOS 3
型號:
IPP180N10N3GXKSA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
500
1+NT$85.728
10+NT$35.177
100+NT$33.866
500+NT$28.269
起訂量:1 倍增量:1
價格: NT$85.728 數量:

合計: NT$86

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
43A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
18mOhm @ 33A, 10V
Vgs(th) (Max) @ Id
3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
71W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3
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