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首頁 > Infineon Technologies代理商 > IPI086N10N3GXKSA1
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IPI086N10N3GXKSA1

型號描述:
N-Channel 100 V 80A (Tc) 125W (Tc) Through Hole PG-TO262-3
MOSFET N-CH 100V 80A TO262-3
型號:
IPI086N10N3GXKSA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
1+NT$90.334
10+NT$58.097
50+NT$44.132
100+NT$39.626
500+NT$31.722
起訂量:1 倍增量:1
價格: NT$90.334 數量:

合計: NT$90

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
8.6mOhm @ 73A, 10V
Vgs(th) (Max) @ Id
3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3980 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
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