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首頁 > Infineon Technologies代理商 > IMZA75R025M2HXKSA1
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IMZA75R025M2HXKSA1

型號描述:
N-Channel 840 V 60A (Tc) 202W (Tc) Through Hole PG-TO247-4-U02
IMZA75R025M2HXKSA1
型號:
IMZA75R025M2HXKSA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
1+NT$561.132
30+NT$343.28
60+NT$317.373
120+NT$295.598
510+NT$271.728
起訂量:1 倍增量:1
價格: NT$561.132 數量:

合計: NT$561

FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
840 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 20V
Rds On (Max) @ Id, Vgs
22mOhm @ 36.7A, 20V
Vgs(th) (Max) @ Id
5.6V @ 8.1mA
Gate Charge (Qg) (Max) @ Vgs
49 nC @ 18 V
Vgs (Max)
+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
1729 pF @ 500 V
FET Feature
-
Power Dissipation (Max)
202W (Tc)
Operating Temperature
-55°C ~ 175°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-4-U02
Package / Case
TO-247-4
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