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首頁 > Infineon Technologies代理商 > IMCQ120R017M2HXTMA1
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IMCQ120R017M2HXTMA1

型號描述:
N-Channel 1200 V 118A (Tc) 580W (Tc) Surface Mount PG-HDSOP-22
SICFET N-CH 1200V 118A 22PWRBSOP
型號:
IMCQ120R017M2HXTMA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
750+NT$355.866
起訂量:750 倍增量:1
價格: NT$355.866 數量:

合計: NT$266900

FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
118A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
17.1mOhm @ 40A, 18V
Vgs(th) (Max) @ Id
5.1V @ 12.7mA
Gate Charge (Qg) (Max) @ Vgs
91.1 nC @ 18 V
Vgs (Max)
+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
3730 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
580W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
PG-HDSOP-22
Package / Case
22-PowerBSOP Module
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