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首頁 > Infineon Technologies代理商 > IGT65R055D2ATMA1
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IGT65R055D2ATMA1

型號描述:
N-Channel 650 V 31A (Tc) 106W (Tc) Surface Mount PG-HSOF-8-3
型號:
IGT65R055D2ATMA1
品牌:
Infineon Technologies
交期:
8-12工作天
原廠包裝量:
2000
2000+NT$168.355
起訂量:2000 倍增量:1
價格: NT$168.355 數量:

合計: NT$336710

FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
66mOhm @ 7.9A
Vgs(th) (Max) @ Id
1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs
4.7 nC @ 3 V
Vgs (Max)
-10V
Input Capacitance (Ciss) (Max) @ Vds
340 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
106W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
PG-HSOF-8-3
Package / Case
8-PowerSFN
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