我的購物車 0
購物車中還沒有商品,趕快選購吧!
影像僅供參考,以產品規格為準

IDH08G65C5XKSA2

型號描述:
Diode 650 V 8A Through Hole PG-TO220-2-1
DIODE SIL CARB 650V 8A PGTO2201
型號:
IDH08G65C5XKSA2
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
1+NT$156.578
10+NT$102.98
50+NT$79.912
100+NT$72.483
500+NT$59.467
起訂量:1 倍增量:1
價格: NT$156.578 數量:

合計: NT$157

Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
8A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 8 A
Speed
Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
140 µA @ 650 V
Capacitance @ Vr, F
250pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
PG-TO220-2-1
Operating Temperature - Junction
-55°C ~ 175°C
  • 資訊中心