我的購物車0
購物車中還沒有商品,趕快選購吧!
首頁 > Infineon Technologies代理商 > IAUCN04S6N013TATMA1
IAUCN04S6N013TATMA1
影像僅供參考,以產品規格為準

IAUCN04S6N013TATMA1

型號描述:
N-Channel 40 V 230A (Tc) 133W (Tc) Surface Mount PG-LHDSO-10-1
MOSFET_(20V 40V)
型號:
IAUCN04S6N013TATMA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
2000
1+NT$80.4375
10+NT$66.8883
100+NT$53.2282
500+NT$45.0407
1000+NT$38.216
起訂量:1倍增量:1
價格:NT$80.4375數量:

合計:NT$80

Packaging
Tape & Reel (TR)
Package / Case
10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
230A (Tc)
Rds On (Max) @ Id, Vgs
1.32mOhm @ 60A, 10V
FET Feature
-
Power Dissipation (Max)
133W (Tc)
Vgs(th) (Max) @ Id
3V @ 60µA
Supplier Device Package
PG-LHDSO-10-1
Grade
Automotive
Drive Voltage (Max Rds On, Min Rds On)
7V, 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
40 V
Gate Charge (Qg) (Max) @ Vgs
69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4810 pF @ 25 V
Qualification
AEC-Q101
  • 精選品牌
    • Samsung
    • ADI
    • Murata11
    • Amphenol
    • Roving
    • Walsin
    • Panasonic
    • TE
    • United-Chemi-Con
    • Molex
    • Nichicon
    • Microchip
    • Bourns
    • ROHM
    • AVX
    • Catalyst
    • ST
    • NXP
    • Vishay
    • KEMET
    • TDK
    • FTDI
    • HARTING
    • Mean Well
    • BroadcomLimited
    • Eaton
    • Microsemi
    • Atmel
    • JST
    • Agilent
      • 資訊中心