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首頁 > Infineon Technologies代理商 > F3L6MR20W2M1HB70BPSA1
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F3L6MR20W2M1HB70BPSA1

型號描述:
CoolSiC MOSFET half-bridge module 2000 V
型號:
F3L6MR20W2M1HB70BPSA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
15
1+NT$11402.953
起訂量:1 倍增量:1
價格: NT$11402.953 數量:

合計: NT$11403

Technology
Silicon Carbide (SiC)
Configuration
4 N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
2000V (2kV)
Current - Continuous Drain (Id) @ 25°C
155A (Tj)
Rds On (Max) @ Id, Vgs
8.7mOhm @ 100A, 18V
Vgs(th) (Max) @ Id
5.15V @ 112mA
Gate Charge (Qg) (Max) @ Vgs
297nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds
24100pF @ 1200V
Power - Max
-
Operating Temperature
-40°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
-
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