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首頁 > Infineon Technologies代理商 > BSB056N10NN3GXUMA1
BSB056N10NN3GXUMA1
影像僅供參考,以產品規格為準

BSB056N10NN3GXUMA1

型號描述:
N-Channel 100 V 9A (Ta), 83A (Tc) 2.8W (Ta), 78W (Tc) Surface Mount MG-WDSON-2, CanPAK M?
MOSFET N-CH 100V 9A/83A 2WDSON
型號:
BSB056N10NN3GXUMA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
1+NT$134.0625
10+NT$112.684
100+NT$91.1589
500+NT$81.031
1000+NT$69.3829
2000+NT$65.3313
起訂量:1倍增量:1
價格:NT$134.0625數量:

合計:NT$134

Packaging
Tape & Reel (TR)
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
9A (Ta), 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
5.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
74nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5500pF @ 50V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 78W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
MG-WDSON-2, CanPAK M™
Package / Case
3-WDSON
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