IRFZ44VPBF
- 型號描述:
- MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 16.5 Milliohms;ID 55A;TO-220AB;PD 115W;-55de
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 16.5 Milliohms; ID 55A; TO-220AB; PD 115W; -55de
- 型號:
- IRFZ44VPBF
- 品牌:
- INFINEON
- 交期:
- 10-16工作天
- 原廠包裝量:
- 幣別 (RMB)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | ¥11.1885 |
| 10+ | ¥9.176 |
| 50+ | ¥7.6906 |
| 100+ | ¥6.9958 |
| 500+ | ¥6.912 |
| 1000+ | ¥6.8281 |
| 2000+ | ¥6.7922 |
| 4000+ | ¥6.7562 |
起訂量：1倍增量：1
價格:¥11.1885數量:
合計:¥11.19
- Series
- HEXFET®
- Packaging
- Tube
- Part Status
- Active
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 60V
- Current - Continuous Drain (Id) @ 25°C
- 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Rds On (Max) @ Id, Vgs
- 16.5mOhm @ 31A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 67nC @ 10V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 1812pF @ 25V
- FET Feature
- -
- Power Dissipation (Max)
- 115W (Tc)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-220AB
- Package / Case
- TO-220-3
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