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首頁 > INFINEON代理商 > IRF1010EPBF
IRF1010EPBF
影像僅供參考,以產品規格為準

IRF1010EPBF

型號描述:
N-Channel 60V 84A (Tc) 200W (Tc) Through Hole TO-220AB
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 12 Milliohms; ID 84A; TO-220AB; PD 200W; gFS 69S
型號:
IRF1010EPBF
品牌:
INFINEON
交期:
10-16工作天
原廠包裝量:
1+¥53.4627
10+¥14.8775
50+¥8.9506
100+¥8.2037
500+¥7.7098
1000+¥7.6134
2000+¥7.5412
4000+¥7.505
起訂量:1倍增量:1
價格:¥53.4627數量:

合計:¥53.46

Series
HEXFET®
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
84A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
12mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
130nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3210pF @ 25V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
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