- Transistor Type
- NPN
- Current - Collector (Ic) (Max)
- 500 mA
- Voltage - Collector Emitter Breakdown (Max)
- 300 V
- Vce Saturation (Max) @ Ib, Ic
- 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 40 @ 30mA, 10V
- Power - Max
- 625 mW
- Frequency - Transition
- 50MHz
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package
- TO-92
- 精選品牌
- 熱銷產品
- PZS51A5V1CS_R1_00001
- LTC7891RUFDM#PBF
- 323161
- M24308/3-2F
- R5F513T3AGNH#20
- LTC6255HS6#TRMPBF
- ADN4624BRNZ
- LT3029EMSE#TRPBF
- 30DRPS4E(D)
- 30DRPS4E
- DF63W-2EP-3.96C
- PJW8N03_R2_00001
- W25Q32JVSSIM
- WIG-16300
- M6-21-427
- 10169891-453001SLF
- AFB0924SH-AF00
- MS27473T12F98PA
- ASL5115SHNZ
- 4922R-08L
- RJFC2ZN
- HCPL-4502-500E
- EEU-FS1A821B
- CRCW1210105RFKEA
- LQM21PN2R2MGSD
- 1SMB3EZ24_R1_00001
- DN01508D
- RC0805FR-0726K7L
- DAR71210
- DAR71210
- DAR71210
- DAR71210
- FDA117GRTR
- MP1653AGTF-Z
- DUA55CM44
- RT6263BHGJ8F
- SD24C-7
- RC0402FR-0736K5P
- 431256083726
- RG2012P-101-B-T5
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