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DMN2014LHAB-7

型號描述:
Mosfet Array 20V 9A 800mW Surface Mount U-DFN2030-6 (Type B)
MOSFET 2N-CH 20V 9A 6UDFN
型號:
DMN2014LHAB-7
品牌:
Diodes Incorporated
交期:
5-8工作天
原廠包裝量:
3000+NT$7.745
9000+NT$6.78
起訂量:3000 倍增量:1
價格: NT$7.745 數量:

合計: NT$23235

Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual) Common Drain
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
9A
Rds On (Max) @ Id, Vgs
13mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1550pF @ 10V
Power - Max
800mW
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-UFDFN Exposed Pad
Supplier Device Package
U-DFN2030-6 (Type B)
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