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CGD65C025SP2

型號描述:
N-Channel 650 V 60A Surface Mount, Wettable Flank BHDFN-9-1
650V GAN HEMT, 25 MOHM, 60A, BHD
型號:
CGD65C025SP2
品牌:
Cambridge GaN Devices
交期:
5-8工作天
原廠包裝量:
1+NT$858.032
10+NT$630.391
起訂量:1 倍增量:1
價格: NT$858.032 數量:

合計: NT$858

FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
60A
Rds On (Max) @ Id, Vgs
35mOhm @ 20A, 15V
Vgs(th) (Max) @ Id
4.2V @ 22mA
Mounting Type
Surface Mount, Wettable Flank
Supplier Device Package
BHDFN-9-1
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