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ALD110900PAL

型號描述:
MOSFET Dual EPAD(R) N-Ch
型號:
ALD110900PAL
品牌:
Advanced Linear Devices
交期:
5-8工作天
原廠包裝量:
50
1+NT$288.943
10+NT$231.084
100+NT$186.631
500+NT$165.816
1000+NT$147.118
起訂量:1 倍增量:1
價格: NT$288.943 數量:

合計: NT$289

Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual) Matched Pair
FET Feature
-
Drain to Source Voltage (Vdss)
10.6V
Current - Continuous Drain (Id) @ 25°C
-
Rds On (Max) @ Id, Vgs
500Ohm @ 4V
Vgs(th) (Max) @ Id
20mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
2.5pF @ 5V
Power - Max
500mW
Operating Temperature
0°C ~ 70°C (TJ)
Mounting Type
Through Hole
Package / Case
8-DIP (0.300", 7.62mm)
Supplier Device Package
8-PDIP
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