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MJE5731G

型號描述:
Bipolar (BJT) Transistor PNP 350 V 1 A 10MHz 40 W Through Hole TO-220
型號:
MJE5731G
品牌:
onsemi
交期:
8-12工作天
原廠包裝量:
50
50+NT$19.7646
200+NT$19.3253
1000+NT$18.6665
2000+NT$18.4469
6250+NT$17.7881
起訂量:50 倍增量:1
價格: NT$19.7646 數量:

合計: NT$988

Packaging
Tube
Package / Case
TO-220-3
Mounting Type
Through Hole
Transistor Type
PNP
Operating Temperature
-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic
1V @ 200mA, 1A
Current - Collector Cutoff (Max)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 300mA, 10V
Frequency - Transition
10MHz
Supplier Device Package
TO-220
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
350 V
Power - Max
40 W
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