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首頁 > onsemi代理商 > MJE350G
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MJE350G

型號描述:
Bipolar (BJT) Transistor PNP 300 V 500 mA 20 W Through Hole TO-126
型號:
MJE350G
品牌:
onsemi
交期:
8-12工作天
原廠包裝量:
500
1+NT$14.0548
100+NT$13.6156
300+NT$13.396
1000+NT$12.9568
3000+NT$12.5176
起訂量:1 倍增量:1
價格: NT$14.0548 數量:

合計: NT$14

Packaging
Bulk
Package / Case
TO-225AA, TO-126-3
Mounting Type
Through Hole
Transistor Type
PNP
Operating Temperature
-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 50mA, 10V
Frequency - Transition
-
Supplier Device Package
TO-126
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
300 V
Power - Max
20 W
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