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首頁 > onsemi代理商 > MJE350G
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MJE350G

型號描述:
Bipolar (BJT) Transistor PNP 300 V 500 mA 20 W Through Hole TO-126
型號:
MJE350G
品牌:
onsemi
交期:
10-18工作天
原廠包裝量:
1
500+NT$18.8235
510+NT$17.8057
1100+NT$17.3373
2500+NT$16.8929
5000+NT$16.4704
起訂量:500 倍增量:1
價格: NT$18.8235 數量:

合計: NT$9412

Packaging
Bulk
Package / Case
TO-225AA, TO-126-3
Mounting Type
Through Hole
Transistor Type
PNP
Operating Temperature
-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 50mA, 10V
Frequency - Transition
-
Supplier Device Package
TO-126
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
300 V
Power - Max
20 W
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