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首頁 > Vishay Siliconix代理商 > SQS183ENW-T1_GE3
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SQS183ENW-T1_GE3

型號描述:
N-Channel 150 V 13A (Tc) 115W (Tc) Surface Mount, Wettable Flank PowerPAK? 1212-8SLW
P-CHANNEL 150-V (D-S) 175C MOS
型號:
SQS183ENW-T1_GE3
品牌:
Vishay Siliconix
交期:
5-8工作天
原廠包裝量:
1+NT$55.972
10+NT$35.283
50+NT$26.349
100+NT$23.455
500+NT$18.378
起訂量:1 倍增量:1
價格: NT$55.972 數量:

合計: NT$56

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
254.2mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
47 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1883 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
115W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount, Wettable Flank
Supplier Device Package
PowerPAK® 1212-8SLW
Package / Case
8-PowerVDFN
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