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SQJ504EP-T1_GE3

型號描述:
MOSFET 40/-40V Vds; SO-8L +/-20V Vgs
型號:
SQJ504EP-T1_GE3
品牌:
Vishay Semiconductors
交期:
5-8工作天
原廠包裝量:
3000
起訂量:1 倍增量:1
價格: NT$0 數量:

合計: NT$0

Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
40V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Rds On (Max) @ Id, Vgs
7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30nC @ 10V, 85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1900pF @ 25V, 4600pF @ 25V
Power - Max
34W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8 Dual
Supplier Device Package
PowerPAK® SO-8 Dual
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