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首頁 > Vishay Siliconix代理商 > SISS26DN-T1-GE3
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SISS26DN-T1-GE3

型號描述:
N-Channel 60 V 60A (Tc) 57W (Tc) Surface Mount PowerPAK? 1212-8S
MOSFET N-CH 60V 60A PPAK1212-8S
型號:
SISS26DN-T1-GE3
品牌:
Vishay Siliconix
交期:
5-8工作天
原廠包裝量:
1+NT$74.0037
10+NT$47.469
100+NT$32.2583
500+NT$25.7413
1000+NT$24.7872
起訂量:1 倍增量:1
價格: NT$74.0037 數量:

合計: NT$74

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
37 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1710 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
57W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8S
Package / Case
PowerPAK® 1212-8S
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