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首頁 > Vishay Siliconix代理商 > SISS12DN-T1-GE3
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SISS12DN-T1-GE3

型號描述:
N-Channel 40 V 37.5A (Ta), 60A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK? 1212-8S
MOSFET N-CH 40V 37.5A/60A PPAK
型號:
SISS12DN-T1-GE3
品牌:
Vishay Siliconix
交期:
5-8工作天
原廠包裝量:
3000+NT$15.3361
6000+NT$14.2854
9000+NT$14.0634
起訂量:3000 倍增量:1
價格: NT$15.3361 數量:

合計: NT$46008

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
37.5A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.98mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
89 nC @ 10 V
Vgs (Max)
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds
4270 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
5W (Ta), 65.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8S
Package / Case
PowerPAK® 1212-8S
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