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首頁 > Vishay Siliconix代理商 > SISH521EDN-T1-GE3
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SISH521EDN-T1-GE3

型號描述:
P-Channel 20 V 28A (Ta), 104A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK? 1212-8SH
P-CHANNEL 30-V (D-S) MOSFET
型號:
SISH521EDN-T1-GE3
品牌:
Vishay Siliconix
交期:
5-8工作天
原廠包裝量:
3000+NT$12.774
9000+NT$11.359
起訂量:3000 倍增量:1
價格: NT$12.774 數量:

合計: NT$38322

FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
28A (Ta), 104A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Rds On (Max) @ Id, Vgs
3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
153 nC @ 10 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
6600 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 52W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8SH
Package / Case
PowerPAK® 1212-8SH
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