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首頁 > Vishay Siliconix代理商 > SIR5607DP-T1-RE3
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SIR5607DP-T1-RE3

型號描述:
P-Channel 60 V 22.2A (Ta), 90.9A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK? SO-8
P-CHANNEL 60 V (D-S) MOSFET POWE
型號:
SIR5607DP-T1-RE3
品牌:
Vishay Siliconix
交期:
5-8工作天
原廠包裝量:
1+NT$118.6726
10+NT$77.4705
100+NT$54.0627
500+NT$47.1264
起訂量:1 倍增量:1
價格: NT$118.6726 數量:

合計: NT$119

FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
22.2A (Ta), 90.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
112 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5020 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
6.25W (Ta), 104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
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