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TW048Z65C,S1F

型號描述:
N-Channel 650 V 40A (Tc) 132W (Tc) Through Hole TO-247-4L(X)
G3 650V SIC-MOSFET TO-247-4L 48
型號:
TW048Z65C,S1F
品牌:
Toshiba Semiconductor and Storage
交期:
5-8工作天
原廠包裝量:
1+NT$614.3641
30+NT$384.2635
120+NT$352.6843
起訂量:1 倍增量:1
價格: NT$614.3641 數量:

合計: NT$614

FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
69mOhm @ 20A, 18V
Vgs(th) (Max) @ Id
5V @ 1.6mA
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 18 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1362 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
132W (Tc)
Operating Temperature
175°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L(X)
Package / Case
TO-247-4
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