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TK7J90E,S1E

型號描述:
N-Channel 900 V 7A (Ta) 200W (Tc) Through Hole TO-3P(N)
MOSFET N-CH 900V 7A TO3P
型號:
TK7J90E,S1E
品牌:
Toshiba Semiconductor and Storage
交期:
5-8工作天
原廠包裝量:
1+NT$121.9176
25+NT$66.2254
100+NT$63.4632
500+NT$48.5186
1000+NT$45.0884
2000+NT$44.7692
起訂量:1 倍增量:1
價格: NT$121.9176 數量:

合計: NT$122

Packaging
Tube
Package / Case
TO-3P-3, SC-65-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
7A (Ta)
Rds On (Max) @ Id, Vgs
2Ohm @ 3.5A, 10V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Vgs(th) (Max) @ Id
4V @ 700µA
Supplier Device Package
TO-3P(N)
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
900 V
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1350 pF @ 25 V
Qualification
-
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