2SA1930(LBS2MATQ,M
- 型號描述:
-
Bipolar (BJT) Transistor PNP 180 V 2 A 200MHz 2 W Through Hole TO-220NIS
TRANS PNP 180V 2A TO-220NIS
- 型號:
- 2SA1930(LBS2MATQ,M
- 品牌:
- Toshiba Semiconductor and Storage
- 交期:
- 5-8工作天
- 原廠包裝量:
- Transistor Type
- PNP
- Current - Collector (Ic) (Max)
- 2 A
- Voltage - Collector Emitter Breakdown (Max)
- 180 V
- Vce Saturation (Max) @ Ib, Ic
- 1V @ 100mA, 1A
- Current - Collector Cutoff (Max)
- 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 100mA, 5V
- Power - Max
- 2 W
- Frequency - Transition
- 200MHz
- Operating Temperature
- 150°C (TJ)
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Supplier Device Package
- TO-220NIS
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