我的購物車 0
購物車中還沒有商品,趕快選購吧!
影像僅供參考,以產品規格為準

RQ3E180BNTB1

型號描述:
N-Channel 30 V 18A (Ta), 39A (Tc) 2W (Ta), 20W (Tc) Surface Mount 8-HSMT (3.2x3)
NCH 30V 39A MIDDLE POWER MOSFET:
型號:
RQ3E180BNTB1
品牌:
Rohm Semiconductor
交期:
5-8工作天
原廠包裝量:
1+NT$60.4632
10+NT$43.2824
100+NT$32.8715
500+NT$28.2796
1000+NT$26.7799
起訂量:1 倍增量:1
價格: NT$60.4632 數量:

合計: NT$60

Packaging
Tape & Reel (TR)
Package / Case
8-PowerVDFN
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
18A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs
3.9mOhm @ 18A, 10V
FET Feature
-
Power Dissipation (Max)
2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id
2.5V @ 1mA
Supplier Device Package
8-HSMT (3.2x3)
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
30 V
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3500 pF @ 15 V
Qualification
-
  • 資訊中心