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R6535KNZ4C13

型號描述:
N-Channel 650 V 35A (Tc) 379W (Tc) Through Hole TO-247G
MOSFET Transistor MOSFET, Nch 650V 35A 3rd Gen, Fast Switch
型號:
R6535KNZ4C13
品牌:
ROHM Semiconductor
交期:
5-8工作天
原廠包裝量:
600
1+NT$145.0456
25+NT$119.6048
起訂量:1 倍增量:1
價格: NT$145.0456 數量:

合計: NT$145

Packaging
Tube
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Rds On (Max) @ Id, Vgs
115mOhm @ 18.1A, 10V
FET Feature
-
Power Dissipation (Max)
379W (Tc)
Vgs(th) (Max) @ Id
5V @ 1.21mA
Supplier Device Package
TO-247G
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
650 V
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 25 V
Qualification
-
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