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R6086YNZ4C13

型號描述:
型號:
R6086YNZ4C13
品牌:
ROHM Semiconductor
交期:
6-9工作天
原廠包裝量:
1
12+NT$455.1772
起訂量:12 倍增量:1
價格: NT$455.1772 數量:

合計: NT$5462

Packaging
Tube
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
86A (Tc)
Rds On (Max) @ Id, Vgs
44mOhm @ 17A, 12V
FET Feature
-
Power Dissipation (Max)
781W (Tc)
Vgs(th) (Max) @ Id
6V @ 4.6mA
Supplier Device Package
TO-247G
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
10V, 12V
Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
600 V
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
5100 pF @ 100 V
Qualification
-
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