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R6012JNXC7G

型號描述:
N-Channel 600 V 12A (Tc) 60W (Tc) Through Hole TO-220FM
MOSFET Transistor MOSFET, Nch 600V 12A 3rd Gen, Fast Recover
型號:
R6012JNXC7G
品牌:
ROHM Semiconductor
交期:
5-8工作天
原廠包裝量:
1000
1+NT$76.9832
10+NT$75.0008
100+NT$70.0448
500+NT$64.7584
1000+NT$57.4896
起訂量:1 倍增量:1
價格: NT$76.9832 數量:

合計: NT$77

Packaging
Tube
Package / Case
TO-220-3 Full Pack
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Rds On (Max) @ Id, Vgs
390mOhm @ 6A, 15V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Vgs(th) (Max) @ Id
7V @ 2.5mA
Supplier Device Package
TO-220FM
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
15V
Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
600 V
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds
900 pF @ 100 V
Qualification
-
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