PDTC123YQB-QZ
- 型號描述:
-
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 230 MHz 340 mW Surface Mount, Wettable Flank DFN1110D-3
PDTC123YQB-Q/SOT8015/DFN1110D-
- 型號:
- PDTC123YQB-QZ
- 品牌:
- Nexperia USA Inc.
- 交期:
- 5-8工作天
- 原廠包裝量:
- Transistor Type
- NPN - Pre-Biased
- Current - Collector (Ic) (Max)
- 100 mA
- Voltage - Collector Emitter Breakdown (Max)
- 50 V
- Resistors Included
- R1 and R2
- Resistor - Base (R1)
- 2.2 kOhms
- Resistor - Emitter Base (R2)
- 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 35 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic
- 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)
- 100nA
- Frequency - Transition
- 230 MHz
- Power - Max
- 340 mW
- Grade
- Automotive
- Qualification
- AEC-Q101
- Mounting Type
- Surface Mount, Wettable Flank
- Package / Case
- 3-XDFN Exposed Pad
- Supplier Device Package
- DFN1110D-3
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PDTC123YQB-QZ
