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2N7002-G
影像僅供參考,以產品規格為準

2N7002-G

型號描述:
2N7002 Series 60 V 115 mA 7.5 Ohm N-Channel Enhancement-Mode Vertical DMOS FETs
Power Field-Effect Transistor, 0.25A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
型號:
2N7002-G
品牌:
Microchip
交期:
10-15工作天
原廠包裝量:
1+¥6.9632
25+¥5.8752
100+¥5.3312
1000+¥4.4608
5000+¥4.0256
起訂量:1倍增量:1
價格:¥6.9632數量:

合計:¥6.96

Series
-
Packaging
Tape & Reel (TR)
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 25V
FET Feature
-
Power Dissipation (Max)
200mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-236
Package / Case
TO-236-3, SC-59, SOT-23-3
Base Part Number
2N7002
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