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首頁 > Infineon Technologies代理商 > IPP65R110CFDAAKSA1
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IPP65R110CFDAAKSA1

型號描述:
N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO220-3
型號:
IPP65R110CFDAAKSA1
品牌:
Infineon Technologies
交期:
6-9工作天
原廠包裝量:
1
10+NT$192.6962
起訂量:10 倍增量:1
價格: NT$192.6962 數量:

合計: NT$1927

Packaging
Tube
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
-40°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
31.2A (Tc)
Rds On (Max) @ Id, Vgs
110mOhm @ 12.7A, 10V
FET Feature
-
Power Dissipation (Max)
277.8W (Tc)
Vgs(th) (Max) @ Id
4.5V @ 1.3mA
Supplier Device Package
PG-TO220-3
Grade
Automotive
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
650 V
Gate Charge (Qg) (Max) @ Vgs
118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3240 pF @ 100 V
Qualification
AEC-Q101
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