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首頁 > Infineon Technologies代理商 > IPP60R190P6XKSA1
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IPP60R190P6XKSA1

型號描述:
N-Channel 600 V 20.2A (Tc) 151W (Tc) Through Hole PG-TO220-3
MOSFET N-CH 600V 20.2A TO220-3
型號:
IPP60R190P6XKSA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
1+NT$77.3136
50+NT$42.463
100+NT$37.8704
500+NT$35.0462
1000+NT$33.4074
起訂量:1 倍增量:1
價格: NT$77.3136 數量:

合計: NT$77

Packaging
Tube
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
20.2A (Tc)
Rds On (Max) @ Id, Vgs
190mOhm @ 7.6A, 10V
FET Feature
-
Power Dissipation (Max)
151W (Tc)
Vgs(th) (Max) @ Id
4.5V @ 630µ
Supplier Device Package
PG-TO220-3
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
600 V
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1750 pF @ 100 V
Qualification
-
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