我的購物車 0
購物車中還沒有商品,趕快選購吧!
首頁 > Infineon Technologies代理商 > IPN50R1K4CEATMA1
影像僅供參考,以產品規格為準

IPN50R1K4CEATMA1

型號描述:
N-Channel 500 V 4.8A (Tc) 5W (Tc) Surface Mount PG-SOT223-3
MOSFET N-CH 500V 4.8A SOT223
型號:
IPN50R1K4CEATMA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
1+NT$10.9032
10+NT$8.1278
100+NT$6.7402
500+NT$6.2882
起訂量:1 倍增量:1
價格: NT$10.9032 數量:

合計: NT$11

Packaging
Tape & Reel (TR)
Package / Case
TO-261-4, TO-261AA
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
4.8A (Tc)
Rds On (Max) @ Id, Vgs
1.4Ohm @ 900mA, 13V
FET Feature
-
Power Dissipation (Max)
5W (Tc)
Vgs(th) (Max) @ Id
3.5V @ 70µA
Supplier Device Package
PG-SOT223-3
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
13V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
500 V
Gate Charge (Qg) (Max) @ Vgs
8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
178 pF @ 100 V
Qualification
-
  • 資訊中心